Print Page
SI3410DV-T1-GE3
MOSFET, N-CH, 30V, 8A, TSOP-6
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3410DV-T1-GE3
Newark Part No.97Y9498
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
Packaging Options
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3410DV-T1-GE3
Newark Part No.97Y9498
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8A
Drain Source On State Resistance0.0195ohm
On Resistance Rds(on)0.016ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd4.1W
Gate Source Threshold Voltage Max3V
Power Dissipation4.1W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0195ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.016ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
4.1W
Power Dissipation
4.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for SI3410DV-T1-GE3
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate