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SI2365EDS-T1-GE3
MOSFET, P-CH, -20V, -5.9A, SOT-23
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.587 | $2.93 |
| Total Price | $2.93 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.587 |
| 50+ | $0.422 |
| 100+ | $0.280 |
| 250+ | $0.240 |
| 500+ | $0.199 |
| 1000+ | $0.165 |
| 2500+ | $0.148 |
| 5000+ | $0.130 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.108 |
| 9000+ | $0.093 |
| 15000+ | $0.088 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2365EDS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel05AC9484
Re-Reel01AC4983RL
Cut Tape01AC4983
Product RangeTrenchFET
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.9A
On Resistance Rds(on)0.0265ohm
Drain Source On State Resistance0.032ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
Power Dissipation Pd1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0265ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
5.9A
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Alternatives for SI2365EDS-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate