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SI2343DS-T1-E3
Power MOSFET, P Channel, 30 V, 4 A, 53 mohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2343DS-T1-E3
Newark Part No.
Full Reel35K3455
Cut Tape06J7590
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2343DS-T1-E3
Newark Part No.
Full Reel35K3455
Cut Tape06J7590
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4A
Drain Source On State Resistance53mohm
On Resistance Rds(on)0.053ohm
Transistor MountingSurface Mount
Power Dissipation Pd750mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-236
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
53mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.053ohm
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
3V
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate