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SI2336DS-T1-GE3
Power MOSFET, N Channel, 30 V, 5.2 A, 42 mohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.194 |
| 5000+ | $0.190 |
| 10000+ | $0.175 |
| 20000+ | $0.163 |
| 30000+ | $0.152 |
| 50000+ | $0.146 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$582.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-GE3Copy
Newark Part No.65T1688
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
Drain Source On State Resistance42mohm
On Resistance Rds(on)0.034ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.8W
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max400mV
Power Dissipation1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- N-channel 30V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Used in DC/DC converters, boost converters
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
42mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
On Resistance Rds(on)
0.034ohm
Power Dissipation Pd
1.8W
Transistor Case Style
SOT-23
Power Dissipation
1.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate