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SI2318DS-T1-E3
Power MOSFET, N Channel, 40 V, 3.9 A, 0.045 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2318DS-T1-E3Copy
Newark Part No.
Full Reel85W0176
Re-Reel06J7580RL
Cut Tape06J7580
Your Part Number
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2318DS-T1-E3Copy
Newark Part No.
Full Reel85W0176
Re-Reel06J7580RL
Cut Tape06J7580
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3.9A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.036ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd750mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (04-Feb-2026)
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Product Overview
The SI2318DS-T1-E3 is a N-channel TrenchFET® Power MOSFET with power dissipation at 750mW.
- ±20V Gate-source voltage
- Halogen-free
Applications
Industrial, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.9A
On Resistance Rds(on)
0.036ohm
Rds(on) Test Voltage
20V
Transistor Case Style
TO-236
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability