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SI2316BDS-T1-GE3
Power MOSFET, N Channel, 30 V, 4.5 A, 0.05 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2316BDS-T1-GE3
Newark Part No.16P3710
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2316BDS-T1-GE3
Newark Part No.16P3710
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4.5A
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.05ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd1.25W
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max3V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.5A
Drain Source On State Resistance
0.05ohm
Rds(on) Test Voltage
20V
Transistor Case Style
TO-236
Power Dissipation
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate