Print Page
SI2312BDS-T1-E3
MOSFET, N-CH, 20V, 3.9A, SOT-23-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2312BDS-T1-E3Copy
Newark Part No.
Re-Reel24AJ1911RL
Cut Tape24AJ1911
Your Part Number
Available to Order by Phone
Please contact us for latest stock details.
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2312BDS-T1-E3Copy
Newark Part No.
Re-Reel24AJ1911RL
Cut Tape24AJ1911
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.9A
On Resistance Rds(on)0.025ohm
Drain Source On State Resistance0.031ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max850mV
Power Dissipation Pd750mW
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for SI2312BDS-T1-E3
2 Products Found
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.025ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
750mW
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
3.9A
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate