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SI2307CDS-T1-GE3
MOSFET, P-CH, 30 V, 2.7 A, SOT-23-3
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ManufacturerVISHAY
Manufacturer Part NoSI2307CDS-T1-GE3
Newark Part No.55R1910
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2307CDS-T1-GE3
Newark Part No.55R1910
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.7A
Drain Source On State Resistance0.088ohm
On Resistance Rds(on)0.073ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.1W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.088ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.1W
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2.7A
On Resistance Rds(on)
0.073ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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