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SI2305CDS-T1-GE3
MOSFET, P-CH, 8V, 5.8A, SOT-23 ROHS COMPLIANT: YES
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3,000 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 3000+ | $0.173 |
| 6000+ | $0.167 |
| 12000+ | $0.161 |
| 18000+ | $0.155 |
| 30000+ | $0.149 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$519.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2305CDS-T1-GE3
Newark Part No.96AJ0106
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability