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SI2303CDS-T1-GE3
MOSFET, P-CH, 30V, 2.7A, SOT-23 ROHS COMPLIANT: YES
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9,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.214 |
| 6000+ | $0.205 |
| 12000+ | $0.196 |
| 18000+ | $0.193 |
| 30000+ | $0.191 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$642.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2303CDS-T1-GE3Copy
Newark Part No.96AJ0104
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.7A
Drain Source On State Resistance0.19ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.7A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability