Print Page
SI2302HDS-T1-GE3
MOSFET, N-CH, 20V, 2.6A, TO-236
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2302HDS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Re-Reel51AM8220RL
Cut Tape51AM8220
Product RangeTrenchFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.382 | $1.91 |
| Total Price | $1.91 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.382 |
| 15+ | $0.235 |
| 25+ | $0.230 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302HDS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Re-Reel51AM8220RL
Cut Tape51AM8220
Product RangeTrenchFET Series
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max850mV
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate