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SI2300DS-T1-GE3
Power MOSFET, N Channel, 30 V, 3.6 A, 0.068 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2300DS-T1-GE3
Newark Part No.
Full Reel86R3867
Cut Tape69W7184
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2300DS-T1-GE3
Newark Part No.
Full Reel86R3867
Cut Tape69W7184
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
On Resistance Rds(on)0.055ohm
Drain Source On State Resistance0.068ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.7W
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max600mV
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI2300DS-T1-GE3 is an N-channel Power MOSFET, 100% Rg tested and suitable for load switch applications.
- Halogen-free in according to IEC 61249-2-21 standard
Applications
Power Management, Portable Devices
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.055ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.7W
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.6A
Drain Source On State Resistance
0.068ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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