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ManufacturerVISHAY
Manufacturer Part NoSI1902DL-T1-E3
Newark Part No.06J7550
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1902DL-T1-E3
Newark Part No.06J7550
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id660mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.32ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The SI1902DL-T1-E3 is a dual N-channel MOSFET intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250mA) need to be switched, either directly or by using a level shift configuration. It offers improved ON-resistance value and enhanced thermal performance.
- ±12V Gate to source voltage
- 1A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
660mA
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.32ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability