Print Page
SI1025X-T1-GE3
Dual MOSFET, Dual P Channel, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1025X-T1-GE3
Newark Part No.97W2617
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1025X-T1-GE3
Newark Part No.97W2617
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id190mA
Drain Source Voltage Vds P Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel190mA
Continuous Drain Current Id P Channel190mA
Drain Source On State Resistance N Channel4ohm
Drain Source On State Resistance P Channel4ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
190mA
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
190mA
Drain Source On State Resistance P Channel
4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
190mA
Drain Source On State Resistance N Channel
4ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability