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SI1022R-T1-GE3
MOSFET Transistor, N Channel, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V RoHS Compliant: Yes
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ManufacturerVISHAY
Manufacturer Part NoSI1022R-T1-GE3
Newark Part No.
Re-Reel48W6775
Cut Tape48W6775
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1022R-T1-GE3
Newark Part No.
Re-Reel48W6775
Cut Tape48W6775
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id330mA
Drain Source On State Resistance1.25ohm
On Resistance Rds(on)1.25ohm
Transistor Case StyleSC-75A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd250mW
Gate Source Threshold Voltage Max2.5V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.25ohm
Transistor Case Style
SC-75A
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
330mA
On Resistance Rds(on)
1.25ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
250mW
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate