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ManufacturerVISHAY
Manufacturer Part NoJ174-E3
Newark Part No.51K2075
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoJ174-E3
Newark Part No.51K2075
Technical Datasheet
Breakdown Voltage Vbr30V
Gate Source Breakdown Voltage Max30V
Zero Gate Voltage Drain Current Idss Min-20mA
Zero Gate Voltage Drain Current Max-135mA
Gate Source Cutoff Voltage Max10V
Transistor Case StyleTO-226AA
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeP Channel
Transistor MountingThrough Hole
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Idss Min
-20mA
Gate Source Cutoff Voltage Max
10V
Transistor Type
JFET
Channel Type
P Channel
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Gate Source Breakdown Voltage Max
30V
Zero Gate Voltage Drain Current Max
-135mA
Transistor Case Style
TO-226AA
No. of Pins
3 Pin
Transistor Mounting
Through Hole
Qualification
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate