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IRLD110PBF
Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRLD110PBF
Newark Part No.97K2344
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD110PBF
Newark Part No.97K2344
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance0.54ohm
On Resistance Rds(on)0.54ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd1.3W
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (10-Jun-2022)
Product Overview
- N-channel power MOSFET in HVMDIP package
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- Logic-level gate drive
- 175°C operating temperature
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation Pd
1.3W
No. of Pins
4Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1A
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate