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IRFS11N50APBF
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.890 |
| 10+ | $3.780 |
| 25+ | $2.450 |
| 50+ | $2.330 |
| 100+ | $2.200 |
| 500+ | $2.160 |
| 1000+ | $1.920 |
| 2500+ | $1.880 |
Price for:Each
Minimum: 1
Multiple: 1
$3.89
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFS11N50APBF
Newark Part No.63J7030
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id11A
On Resistance Rds(on)0.52ohm
Drain Source On State Resistance0.52ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd170W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The IRFS11N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Simple drive requirements
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective COSS specified
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.52ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
170W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source On State Resistance
0.52ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate