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IRFBE20PBF-BE3
Power MOSFET, N Channel, 800 V, 1.8 A, 6.5 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.210 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE20PBF-BE3
Newark Part No.06AJ9124
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1.8A
Drain Source On State Resistance6.5ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation54W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.8A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
54W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
6.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability