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IRF840ALPBF
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-262, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRF840ALPBFCopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.63J7411
Your Part Number
1,000 In Stock
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| Quantity | Price |
|---|---|
| 1000+ | $1.950 |
| 2500+ | $1.790 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,950.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF840ALPBFCopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.63J7411
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8A
Drain Source On State Resistance0.85ohm
Rds(on) Test Voltage10V
Power Dissipation3.1W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
SVHCTo Be Advised
Product Overview
The IRF840ALPBF is a HEXFET® N-channel Power MOSFET offers low gate charge Qg results in simple drive requirement. It is suitable for high speed power switching.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage and current
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Rds(on) Test Voltage
10V
No. of Pins
3Pins
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.85ohm
Power Dissipation
3.1W
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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