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BPW77NB
Phototransistor, 850 nm, 10 °, 250 mW, 3 Pins, TO-18
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.730 |
| 2500+ | $1.620 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,730.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The BPW77NB is a Silicon NPN Phototransistor with high radiant sensitivity in hermetically sealed package with base terminal and glass lens. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response time
- ϕ = ±10° Angle of half sensitivity
- Base terminal connected
- Hermetically sealed and leaded package
Applications
Sensing & Instrumentation, Automation & Process Control
Technical Specifications
Wavelength Typ
850nm
Power Consumption
250mW
Transistor Case Style
TO-18
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
10°
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate