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3N163-E3
Power MOSFET, P Channel, 40 V, 50 mA, 250 ohm, TO-206AF, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No3N163-E3
Newark Part No.06J8981
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50mA
On Resistance Rds(on)180ohm
Drain Source On State Resistance250ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Power Dissipation Pd375mW
Transistor Case StyleTO-206AF
Gate Source Threshold Voltage Max2.5V
Power Dissipation375mW
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The 3N163-E3 is a -40V P-channel Enhancement Mode MOSFET designed for analogue switch and pre-amplifier applications where high speed and low parasitic capacitances are required.
- Ultra low input leakage
- 125V High gate breakdown voltage
- High off isolation without power
- Minimize handling ESD problems
Applications
Power Management, Signal Processing, Safety
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
180ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
375mW
Gate Source Threshold Voltage Max
2.5V
No. of Pins
4Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
50mA
Drain Source On State Resistance
250ohm
Rds(on) Test Voltage
20V
Transistor Case Style
TO-206AF
Power Dissipation
375mW
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate