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2N7002K-T1-E3
Power MOSFET, N Channel, 60 V, 500 mA, 2 ohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part No2N7002K-T1-E3Copy
Manufacturer Standard Lead Time10 weeks
Newark Part No.
Re-Reel06J8894RL
Cut Tape06J8894
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.146 | $438.00 |
| Total Price | $438.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.146 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part No2N7002K-T1-E3Copy
Manufacturer Standard Lead Time10 weeks
Newark Part No.
Re-Reel06J8894RL
Cut Tape06J8894
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance2ohm
On Resistance Rds(on)7.5ohm
Transistor MountingSurface Mount
Power Dissipation Pd200mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleTO-236
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002K-T1-E3 is a 60V N-channel MOSFET designed for use with direct logic-level interface and battery operated systems. It is also suitable for relays, solenoids, lamps, hammers, display, memories and transistor drivers.
- Halogen-free according to IEC 61249-2-21 definition
- Low on-resistance
- Low threshold
- Low input capacitance (25pF)
- Fast switching speed (25ns)
- Low input and output leakage
- TrenchFET® power MOSFET
- 2000V ESD protection
- Low offset voltage
- Low-voltage operation
- Easily driven without buffer
- High-speed circuits
- Low error voltage
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
7.5ohm
Power Dissipation Pd
200mW
Gate Source Threshold Voltage Max
2V
Power Dissipation
200mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for 2N7002K-T1-E3
3 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate