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SI7858ADP-T1-GE3
Power MOSFET, N Channel, 12 V, 20 A, 0.0026 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7858ADP-T1-GE3
Newark Part No.
Re-Reel26R1939
Cut Tape26R1939
Your Part Number
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7858ADP-T1-GE3
Newark Part No.
Re-Reel26R1939
Cut Tape26R1939
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0026ohm
On Resistance Rds(on)0.0026ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.9W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max950mV
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Gate Source Threshold Voltage Max
950mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0026ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate