UF3SC120016K3S

UF3SC120016K3S is a SiC FET device based on a unique ‘cascade’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super junction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive. Typical applications are EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, induction heating.

• Typical on-resistance RDS(on) is 16mohm (VGS=12V, ID=50A, TJ=25°C)
• Maximum operating temperature of 175°C
• Excellent reverse recovery, low gate charge
• Low intrinsic capacitance, ESD protected, HBM class 2
• Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
• Drain-source voltage is 1200V
• Continuous drain current is 107A at TC = 25°C
• Operating and storage temperature range from -55 to 175°C
• Pulsed drain current is 350A at TC = 25°C
• Power dissipation is 517W at TC = 25°C