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TW123V65C,LQ(S
Silicon Carbide MOSFET, Single, N Channel, 18 A, 650 V, 0.183 ohm, DFN
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTW123V65C,LQ(SCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.
Re-Reel27AM4913RL
Cut Tape27AM4913
Your Part Number
2,480 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $11.400 | $11.40 |
| Total Price | $11.40 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $11.400 |
| 50+ | $10.440 |
| 100+ | $10.010 |
| 250+ | $9.210 |
| 500+ | $8.610 |
| 1000+ | $7.940 |
| 2500+ | $7.640 |
| 5000+ | $7.310 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW123V65C,LQ(SCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.
Re-Reel27AM4913RL
Cut Tape27AM4913
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id18A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.183ohm
Transistor Case StyleDFN
No. of Pins5Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation76W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.183ohm
No. of Pins
5Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
DFN
Rds(on) Test Voltage
18V
Power Dissipation
76W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate