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TK32E12N1,S1X(S
Power MOSFET, N Channel, 120 V, 60 A, 11 mohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTK32E12N1,S1X(SCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.09AK8691
Your Part Number
90 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.340 |
| 10+ | $1.170 |
| 100+ | $0.938 |
| 500+ | $0.849 |
| 1000+ | $0.761 |
| 2500+ | $0.650 |
| 10000+ | $0.635 |
Price for:Each
Minimum: 1
Multiple: 1
$1.34
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK32E12N1,S1X(SCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.09AK8691
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id60A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.011ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd98W
Power Dissipation98W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
120V
Drain Source On State Resistance
11mohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
98W
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.011ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
98W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate