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SSM6N36FE,LM(T
Dual MOSFET, N Channel, 20 V, 500 mA, 0.63 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N36FE,LM(T
Newark Part No.01AM0639
Your Part Number
Technical Datasheet
4,000 In Stock
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404 Delivery in 1-3 Business Days(US stock)
3596 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $0.378 |
| 10+ | $0.290 |
| 25+ | $0.198 |
| 50+ | $0.164 |
| 100+ | $0.137 |
| 250+ | $0.110 |
| 500+ | $0.092 |
| 1000+ | $0.076 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.38
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N36FE,LM(T
Newark Part No.01AM0639
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.63ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel150mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
500mA
Drain Source On State Resistance N Channel
0.63ohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
150mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate