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STW45N65M5
Power MOSFET, N Channel, 650 V, 35 A, 0.067 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STW45N65M5Copy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | 34AC1986 |
| Product Range | MDmesh V |
| Your Part Number | |
| Technical Datasheet |
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Delivery in 4-6 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $9.900 |
| 10+ | $8.780 |
| 25+ | $7.670 |
| 50+ | $6.550 |
| 100+ | $6.150 |
| 250+ | $5.810 |
| 500+ | $5.690 |
Price for:Each
Minimum: 1
Multiple: 1
$9.90
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STW45N65M5Copy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | 34AC1986 |
| Product Range | MDmesh V |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 35A |
| On Resistance Rds(on) | 0.067ohm |
| Drain Source On State Resistance | 0.067ohm |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 210W |
| Power Dissipation Pd | 210W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | MDmesh V |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
- 650V, 35A N-channel MDmesh™ V power MOSFET in 3 pin TO-247 package
- Worldwide best RDS(on) area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
- Suitable for switching applications
- Based on innovative proprietary vertical process technology, PowerMESH™ horizontal layout structure
- Suitable for applications which require superior power density and outstanding efficiency
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 650V |
| On Resistance Rds(on) | 0.067ohm |
| Transistor Case Style | TO-247 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 210W |
| No. of Pins | 3Pins |
| Product Range | MDmesh V |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.067ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation Pd | 210W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
 | Proposition 65 |