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| Quantity | Price |
|---|---|
| 1+ | $1.450 |
| 10+ | $0.969 |
| 100+ | $0.696 |
| 500+ | $0.583 |
| 1000+ | $0.551 |
| 2500+ | $0.529 |
Price for:Each
Minimum: 1
Multiple: 1
$1.45
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS5NF60L
Newark Part No.33R1307
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id5A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STS5NF60L is a STripFET™ N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard outline for easy automated surface-mount assembly
- Low threshold drive
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.045ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
