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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP80PF55
Newark Part No.89K1636
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP80PF55
Newark Part No.89K1636
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
On Resistance Rds(on)0.018ohm
Drain Source On State Resistance0.018ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd300W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The STP80PF55 is a P-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
- Extremely dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
Applications
Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.018ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
300W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.018ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
300W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate