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STP20NM60FD
Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $7.330 |
| 10+ | $4.780 |
| 25+ | $4.670 |
| 50+ | $4.550 |
| 100+ | $4.370 |
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Multiple: 1
$7.33
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP20NM60FD
Newark Part No.26M3681
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20A
Drain Source On State Resistance0.29ohm
On Resistance Rds(on)0.29ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd192W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for STP20NM60FD
2 Products Found
Product Overview
The STP20NM60FD is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The FDmesh™ associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
- High dV/dt and avalanche capabilities
- Low gate input resistance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.29ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.29ohm
Transistor Case Style
TO-220
Power Dissipation Pd
192W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
