Print Page
STP200N3LL
MOSFET, N-CH, 30V, 120A, 175DEG C/176.5W ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP200N3LL
Newark Part No.69AH2850
Your Part Number
Technical Datasheet
1,213 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.04 |
| 10+ | $1.63 |
| 100+ | $1.22 |
| 500+ | $1.11 |
| 1000+ | $1.04 |
| 2500+ | $0.99 |
| 5000+ | $0.96 |
Price for:Each
Minimum: 1
Multiple: 1
$2.04
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP200N3LL
Newark Part No.69AH2850
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id120A
On Resistance Rds(on)0.00215ohm
Drain Source On State Resistance2150µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation176.5W
Power Dissipation Pd176.5W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.00215ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
176.5W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
2150µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
176.5W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability