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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP14NM50N
Newark Part No.43T6306
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.59 |
| 10+ | $3.03 |
| 100+ | $2.43 |
| 500+ | $2.22 |
| 1000+ | $1.97 |
| 2500+ | $1.62 |
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Multiple: 1
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP14NM50N
Newark Part No.43T6306
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id12A
Drain Source On State Resistance0.28ohm
On Resistance Rds(on)0.28ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd90W
Gate Source Threshold Voltage Max3V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STP14NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.28ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
90W
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.28ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for STP14NM50N
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability