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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP11N65M2
Newark Part No.40Y2606
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.38 |
Price for:Each
Minimum: 1
Multiple: 1
$1.38
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP11N65M2
Newark Part No.40Y2606
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7A
On Resistance Rds(on)0.6ohm
Drain Source On State Resistance0.6ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd85W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation85W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.6ohm
Transistor Case Style
TO-220
Power Dissipation Pd
85W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
7A
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
85W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability