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STD96N3LLH6
Power MOSFET, N Channel, 30 V, 80 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD96N3LLH6
Newark Part No.69AH2698
Product RangeSTripFET VI DeepGATE
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.750 |
| 10+ | $1.170 |
| 25+ | $1.060 |
| 50+ | $0.947 |
| 100+ | $0.837 |
| 250+ | $0.766 |
| 500+ | $0.695 |
| 1000+ | $0.649 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD96N3LLH6
Newark Part No.69AH2698
Product RangeSTripFET VI DeepGATE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0037ohm
Drain Source On State Resistance4200µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation70W
Power Dissipation Pd70W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET VI DeepGATE
Qualification-
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
STD96N3LLH6 is a N-channel power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Applications include switching applications, automotive.
- Extremely low on-resistance RDS(on), high avalanche ruggedness
- Low gate drive power losses
- 30V minimum drain-source breakdown voltage (ID = 250µA, VGS= 0, TCASE = 25°C)
- 0.0042ohm maximum static drain-source on resistance (VGS = 10V, ID = 40A, TCASE = 25°C)
- 80A drain current (continuous) at TC = 25°C
- 1 to 2.5V gate threshold voltage range (VDS = VGS, ID = 250µA, TCASE = 25°C)
- 2200pF typical input capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 400pF typical output capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 280pF typical reverse transfer capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- DPAK package
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0037ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
No. of Pins
3Pins
Product Range
STripFET VI DeepGATE
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
70W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate
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