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STD65N55F3
Power MOSFET, N Channel, 55 V, 32 A, 6.5 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD65N55F3
Newark Part No.
Re-Reel33R1174
Cut Tape33R1174
Your Part Number
520 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.410 | $3.41 |
| Total Price | $3.41 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.410 |
| 10+ | $2.370 |
| 25+ | $2.170 |
| 50+ | $1.980 |
| 100+ | $1.780 |
| 250+ | $1.670 |
| 500+ | $1.560 |
| 1000+ | $1.490 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD65N55F3
Newark Part No.
Re-Reel33R1174
Cut Tape33R1174
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id32A
Drain Source On State Resistance6.5ohm
On Resistance Rds(on)6.5ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd110W
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD65N55F3 is a STripFET™ N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size™ strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
- Standard threshold drive
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
32A
On Resistance Rds(on)
6.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
110W
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6.5ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability