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STD3NK90ZT4
Power MOSFET, N Channel, 900 V, 1.5 A, 4.1 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STD3NK90ZT4Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel33R1156RL Cut Tape33R1156 |
| Your Part Number | |
| Technical Datasheet |
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.340 | $3.34 |
| Total Price | $3.34 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.340 |
| 10+ | $2.200 |
| 100+ | $1.560 |
| 500+ | $1.280 |
| 1000+ | $1.250 |
| 2500+ | $1.230 |
| 10000+ | $1.200 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STD3NK90ZT4Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel33R1156RL Cut Tape33R1156 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 900V |
| Continuous Drain Current Id | 1.5A |
| Drain Source On State Resistance | 4.1ohm |
| On Resistance Rds(on) | 4.1ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 90W |
| Gate Source Threshold Voltage Max | 3.75V |
| Power Dissipation | 90W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STD3NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 1.5A |
| On Resistance Rds(on) | 4.1ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 90W |
| Power Dissipation | 90W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 900V |
|---|---|
| Drain Source On State Resistance | 4.1ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3.75V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
 | Proposition 65 |