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STD2NK90Z-1
Power MOSFET, N Channel, 900 V, 1.05 A, 5 ohm, TO-251AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD2NK90Z-1
Newark Part No.33R1149
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.880 |
| 10+ | $1.710 |
| 150+ | $1.410 |
| 525+ | $1.190 |
| 1050+ | $1.100 |
Price for:Each
Minimum: 1
Multiple: 1
$1.88
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD2NK90Z-1
Newark Part No.33R1149
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id1.05A
On Resistance Rds(on)5ohm
Drain Source On State Resistance5ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd70W
Gate Source Threshold Voltage Max3.75V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD2NK90Z-1 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Improved ESD capability
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.05A
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
70W
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
900V
On Resistance Rds(on)
5ohm
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate