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STD1NK60T4
MOSFET, N CH, 600V, 1A, DPAK
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STD1NK60T4Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Full Reel86AK6455 Re-Reel33R1142RL Cut Tape33R1142 |
| Your Part Number | |
| Technical Datasheet |
34,317 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.830 | $1.83 |
| Total Price | $1.83 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.830 |
| 50+ | $0.906 |
| 100+ | $0.815 |
| 250+ | $0.735 |
| 500+ | $0.655 |
| 1000+ | $0.642 |
| 2500+ | $0.629 |
| 5000+ | $0.616 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.567 |
| 5000+ | $0.541 |
| 7500+ | $0.515 |
| 12500+ | $0.505 |
| 25000+ | $0.494 |
| 62500+ | $0.484 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STD1NK60T4Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Full Reel86AK6455 Re-Reel33R1142RL Cut Tape33R1142 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 600V |
| Continuous Drain Current Id | 500mA |
| Drain Source On State Resistance | 8.5ohm |
| On Resistance Rds(on) | 8ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 30W |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 30W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STD1NK60T4 is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- Improved ESD capability
- 100% Avalanche tested
- New high voltage benchmark
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 500mA |
| On Resistance Rds(on) | 8ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 30W |
| Power Dissipation | 30W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 600V |
|---|---|
| Drain Source On State Resistance | 8.5ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Alternatives for STD1NK60T4
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |