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STD1NK60T4
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD1NK60T4
Newark Part No.33R1142
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Packaging Options
Cut Tape
| Quantity | Price |
|---|---|
| 1+ | $1.200 |
| 10+ | $0.952 |
| 25+ | $0.842 |
| 50+ | $0.739 |
| 100+ | $0.627 |
| 250+ | $0.546 |
| 500+ | $0.435 |
| 1000+ | $0.410 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD1NK60T4
Newark Part No.33R1142
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id500mA
Drain Source On State Resistance8.5ohm
On Resistance Rds(on)8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd30W
Gate Source Threshold Voltage Max3V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD1NK60T4 is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- Improved ESD capability
- 100% Avalanche tested
- New high voltage benchmark
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
30W
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
8.5ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Alternatives for STD1NK60T4
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate