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STD16N50M2
Power MOSFET, N Channel, 500 V, 13 A, 0.28 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD16N50M2
Newark Part No.69AH2687
Product RangeMDmesh M2
Technical Datasheet
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.460 |
| 10+ | $1.690 |
| 25+ | $1.540 |
| 50+ | $1.390 |
| 100+ | $1.240 |
| 250+ | $1.140 |
| 500+ | $1.040 |
| 1000+ | $1.000 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.46
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD16N50M2
Newark Part No.69AH2687
Product RangeMDmesh M2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id13A
On Resistance Rds(on)0.24ohm
Drain Source On State Resistance0.28ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation110W
Power Dissipation Pd110W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.24ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
No. of Pins
3Pins
Product Range
MDmesh M2
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
13A
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
110W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate