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STD10P10F6
MOSFET, P-CH, -100V, -10A, TO252AA-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD10P10F6
Newark Part No.32AJ8876
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.390 |
| 10+ | $0.960 |
| 25+ | $0.869 |
| 50+ | $0.778 |
| 100+ | $0.687 |
| 250+ | $0.630 |
| 500+ | $0.572 |
| 1000+ | $0.541 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.39
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD10P10F6
Newark Part No.32AJ8876
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id10A
On Resistance Rds(on)0.136ohm
Drain Source On State Resistance0.136ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
Power Dissipation Pd40W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.136ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
40W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.136ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
40W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability