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STB55NF06LT4
Power MOSFET, N Channel, 30 V, 55 A, 0.018 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06LT4
Newark Part No.
Full Reel86AK6453
Re-Reel33R1125
Cut Tape33R1125
Your Part Number
Technical Datasheet
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.37 |
| 10+ | $1.62 |
| 25+ | $1.48 |
| 50+ | $1.34 |
| 100+ | $1.20 |
| 250+ | $1.13 |
| 500+ | $1.06 |
| 1000+ | $0.93 |
Full Reel
| Quantity | Price |
|---|---|
| 1000+ | $1.01 |
| 2000+ | $0.98 |
| 4000+ | $0.96 |
| 6000+ | $0.95 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06LT4
Newark Part No.
Full Reel86AK6453
Re-Reel33R1125
Cut Tape33R1125
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id55A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd95W
Rds(on) Test Voltage16V
Gate Source Threshold Voltage Max1.7V
Power Dissipation95W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for STB55NF06LT4
1 Product Found
Product Overview
The STB55NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dV/dt capability
- 100% Avalanche tested
- Application oriented characterization
- -55 to 175°C Operating junction temperature
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
16V
Power Dissipation
95W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.014ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
95W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate