Print Page
PD84008L-E
RF FET Transistor, 25 V, 7 A, 26.7 W, 1 GHz, PowerFLAT
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD84008L-E
Newark Part No.56P9923
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD84008L-E
Newark Part No.56P9923
Technical Datasheet
Drain Source Voltage Vds25V
Continuous Drain Current Id7A
Power Dissipation26.7W
Power Dissipation Pd26.7W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StylePowerFLAT
No. of Pins8Pins
RF Transistor CasePowerFLAT
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.
- Excellent thermal stability
- Common source configuration
- POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
- Plastic package
- ESD protection
Technical Specifications
Drain Source Voltage Vds
25V
Power Dissipation
26.7W
Operating Frequency Min
-
Transistor Case Style
PowerFLAT
RF Transistor Case
PowerFLAT
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Continuous Drain Current Id
7A
Power Dissipation Pd
26.7W
Operating Frequency Max
1GHz
No. of Pins
8Pins
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate