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PD57060-E
RF FET Transistor, 65 V, 7 A, 79 W, 1 GHz, PowerSO-10RF
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD57060-E
Newark Part No.07AH6877
Your Part Number
Technical Datasheet
31 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $61.490 |
| 5+ | $55.020 |
| 10+ | $48.540 |
| 25+ | $48.200 |
| 50+ | $47.850 |
| 100+ | $47.510 |
Price for:Each
Minimum: 1
Multiple: 1
$61.49
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD57060-E
Newark Part No.07AH6877
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id7A
Power Dissipation79W
Power Dissipation Pd79W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StylePowerSO-10RF
No. of Pins-
RF Transistor CasePowerSO-10RF
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
79W
Operating Frequency Min
-
Transistor Case Style
PowerSO-10RF
RF Transistor Case
PowerSO-10RF
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
7A
Power Dissipation Pd
79W
Operating Frequency Max
1GHz
No. of Pins
-
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate