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IRF630
Power MOSFET, N Channel, 200 V, 9 A, 400 mohm, TO-220, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoIRF630Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.72K7167
Your Part Number
180 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.210 |
| 10+ | $0.961 |
| 100+ | $0.651 |
| 500+ | $0.562 |
| 1000+ | $0.491 |
| 2500+ | $0.397 |
| 10000+ | $0.385 |
Price for:Each
Minimum: 1
Multiple: 1
$1.21
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoIRF630Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.72K7167
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
Drain Source On State Resistance400mohm
On Resistance Rds(on)0.4ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd100W
Gate Source Threshold Voltage Max3V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company’s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
- Drain to source voltage (Vds) is 200V
- Gate to source voltage of ±20V
- Continuous drain current (Id) is 9A
- Power dissipation (Pd) is 75W
- Operating junction temperature range from -65°C to 150°C
- Gate threshold voltage of 3V
- Low on state resistance of 350mohm at Vgs 10V
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
400mohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.4ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
100W
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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