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BUT30V
Bipolar (BJT) Single Transistor, NPN, 200 V, 100 A, 250 W, ISOTOP, Module
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUT30V
Newark Part No.03M2897
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo200V
Collector Emitter Voltage Max200V
Continuous Collector Current100A
Power Dissipation250W
Power Dissipation Pd250W
Transistor Case StyleISOTOP
DC Collector Current100A
DC Current Gain hFE27hFE
Transistor MountingModule
No. of Pins4Pins
Transition Frequency-
DC Current Gain hFE Min27hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The BUT30V is a NPN Transistor Power Module in a fully insulated package (UL compliant) for easy mounting.
- High current power bipolar module
- Very low Rth junction case
- Specified accidental overload areas
- Low internal parasitic inductance
Applications
Industrial, Power Management, Motor Drive & Control, Maintenance & Repair
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
200V
Power Dissipation
250W
Transistor Case Style
ISOTOP
DC Current Gain hFE
27hFE
No. of Pins
4Pins
DC Current Gain hFE Min
27hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
200V
Continuous Collector Current
100A
Power Dissipation Pd
250W
DC Collector Current
100A
Transistor Mounting
Module
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate