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GD400HFX65C2S
IGBT, HALF BRIDGE, 650V, 509A, MODULE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTARPOWER
Manufacturer Part NoGD400HFX65C2S
Newark Part No.84AH5733
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $124.320 |
| 5+ | $121.940 |
| 10+ | $119.450 |
| 36+ | $118.210 |
| 60+ | $117.000 |
| 108+ | $112.110 |
Price for:Each
Minimum: 1
Multiple: 1
$124.32
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD400HFX65C2S
Newark Part No.84AH5733
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current509A
DC Collector Current509A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation1.26kW
Power Dissipation Pd1.26kW
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo650V
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max650V
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
509A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation Pd
1.26kW
Collector Emitter Voltage V(br)ceo
650V
Transistor Case Style
Module
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
509A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation
1.26kW
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate