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GD200HFX65C1S
TRANSISTOR, IGBT MODULE, 650V, 250A ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD200HFX65C1SCopy
Newark Part No.84AH5721
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current250A
Continuous Collector Current250A
Collector Emitter Saturation Voltage1.45V
Collector Emitter Saturation Voltage Vce(on)1.45V
Power Dissipation612W
Power Dissipation Pd612W
Collector Emitter Voltage V(br)ceo650V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max650V
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
250A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation Pd
612W
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
To Be Advised
DC Collector Current
250A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation
612W
Collector Emitter Voltage V(br)ceo
650V
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate